Ibis Technology Corporation operates under a plan of liquidation and dissolution adopted on January 30, 2009. Pursuant to which the company is in the process of selling its assets. Previously, it was engaged in developing, manufacturing, and marketing Separation by IMplantation of Oxygen (SIMOX), a form of Silicon-On-Insulator (SOI) implantation equipment for the semiconductor industry worldwide. SIMOX creates an insulating oxide barrier below the top surface of a silicon wafer. The companys proprietary oxygen implanters produce SIMOX-SOI wafers by implanting oxygen atoms just below the surface of a silicon wafer to create a very thin layer of silicon dioxide between the thin operating region of the transistor at the surface and the underlying silicon wafer itself. The buried layer of silicon dioxide acts as an insulator for the devices fabricated on the surface of the silicon wafer and reduces the electrical current leakage, as well as helps to reduce the heat generated by the transistors. Its SIMOX-SOI wafers and the finished integrated circuits are used for various commercial applications, including servers and workstations; portable and desktop computers; entertainment devices, such as TVs and game consoles; wireless communications and battery powered feature rich hand held devices, including cell phones; and harsh-environment electronics. The company was founded in 1987 and is based in Danvers, Massachusetts.

• Download SqueezeTrigger (TM) Report
• Download FrictionFactor Report
• Download Daily Short Volume Report
• Download Real-Time Short Volume Tool
• Download Failures to Deliver

• No BuyIns.Net Alerts Available for IBIS